Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/23163
Title: Study of metal gates & high-K dielectrics in nanoelectronics
Authors: MI YANYU
Keywords: CMOSFETs, High-k dielectrics, Metal gates, Interfacial electronic structures, X-ray Photoemission Spectroscopy, Band alignment
Issue Date: 12-Sep-2007
Source: MI YANYU (2007-09-12). Study of metal gates & high-K dielectrics in nanoelectronics. ScholarBank@NUS Repository.
Abstract: The continual downscaling of complementary metal oxide semiconductor (CMOS) devices not only requires the replacement of SiO2 or SiOxNy with high k dielectrics, but also requires the replacement of conventional poly-silicon (poly-Si) gate with metal gates. To achieve these goals, in this work, we studied the integration of metal/high-k dielectrics /semiconductor system for nanoelectronics devices using both experimental and theoretical methods. It includes three parts: (i) Study the growth and electronic structure of LaAlO3 thin films integrated with various semiconductors (Si, Ge, SixGey); (2) Integrate of metal gates with high k dielectrics, and study the interfacial electronic structure at the metal/oxides interfaces; (3) Study the effect of nitrogen on the electronic structures of high k dielectrics. It was found that LaAlO3 is a promising candidate as alternative high k dielectrics, and Ni metal is a potential metal gate materials in PMOS devices integrated with LaAlO3 films. Furthermore, interfacial structures at metal/high k/semiconductor interfaces plays a key role in the performance of whole system.
URI: http://scholarbank.nus.edu.sg/handle/10635/23163
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