Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/19033
Title: Defect Engineering in the formation of Ultra-shallow junctions for advanced nano-metal-oxide-semiconductor technology
Authors: YEONG SAI HOOI
Keywords: Ultra-shallow junctions (USJs), defects, dopants, co-implantation, annealing, surface.
Issue Date: 19-Jan-2010
Source: YEONG SAI HOOI (2010-01-19). Defect Engineering in the formation of Ultra-shallow junctions for advanced nano-metal-oxide-semiconductor technology. ScholarBank@NUS Repository.
Abstract: The formation of ultra-shallow junctions (USJs) in silicon is demanded by progressive miniaturization of CMOS devices. The main objective of this work is to achieve highly doped and electrical activated USJs through defect engineering. Defects generated during processing can interact with doping ions causing anomalous phenomena such as transient enhanced diffusion (TED) and dopant-defect clustering, which are detrimental to the desired USJ properties. The primary study here is concerned with the investigation of co-implantation of C/F/N, advanced flash annealing scheme as well as surface state in effectively controlling dopant diffusion and defect distribution in the pre-amorphized B doped silicon substrate so as to exert control over the amount of dopants as well as their activity. We seek to achieve better physical understanding of the interactions between dopants and defects associated with the advanced USJ techniques, providing some insights for the optimization of USJs in the CMOS devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/19033
Appears in Collections:Ph.D Theses (Open)

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