Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/18881
Title: Ion channeling studies of defect formation in GaN and related materials
Authors: MUKHTAR AHMED RANA
Keywords: Crystals, Defects, Channeling, GaN, Annealing, Lateral growth
Issue Date: 25-Jan-2006
Source: MUKHTAR AHMED RANA (2006-01-25). Ion channeling studies of defect formation in GaN and related materials. ScholarBank@NUS Repository.
Abstract: RBS/channeling, channelling contrast microscopy and ionoluminescence techniques were used to study defect formation in sapphire-coherent and lateral growth of GaN. Thermal stability of GaN is investigated, quantitatively, over a wide range of temperatures 500-1100 oC using RBS/channeling with depth resolution of 5-20 nm. Structural and optical properties of InGaN, used as light emitting medium in GaN based light emitting diodes and laser diodes, are also studied. For this, RBS/channelling, x-ray diffraction spectrometry and photoluminescence were used. Furthermore, Monte Carlo simulations have been used to determine the conditions of channeling and dechanneling enhancement due to lattice translations and rotations in Si crystals.
URI: http://scholarbank.nus.edu.sg/handle/10635/18881
Appears in Collections:Ph.D Theses (Open)

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