Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/18301
Title: Near infra-red photon emission microscopy and spectroscopy
Authors: TAN SOON LENG
Keywords: Near Infra-red, Electroluminescence, Spectroscopy
Issue Date: 19-Jan-2009
Source: TAN SOON LENG (2009-01-19). Near infra-red photon emission microscopy and spectroscopy. ScholarBank@NUS Repository.
Abstract: A novel in-lens Spectroscopic Photon Emission Microscope (SPEM) system using a three element prism to disperse the light is designed and built. The microscope is mounted with an InGaAs detector and is sensitive in the wavelength range 0.9 to 1.6 ?m. Using the SPEM, NIR spectra from p-n junctions, saturated n-MOSFETs of different dimensions and p-MOSFETS are obtained and characterised. Spectra from strained n-MOSFETs are also obtained show that SPEM can be used to monitor strain in the MOSFETs. A model is also developed for frontside and backside analysis to account for the change in the spectra due to the thin dielectric layers and silicon substrate between the emission point and the SPEM. Using the model, frontside and backside intrinsic spectra of a saturated n-MOSFET are successfully derived from the measured spectra. A measurement technique to measure the spectral detectivity of Photon Emission Microscope (PEM) is developed. It is used to measure and compare the spectral detectivity of different PEMs against an absolute scale.
URI: http://scholarbank.nus.edu.sg/handle/10635/18301
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