Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/17670
Title: Advanced Materials And Novel Devices For CMOS Applications
Authors: WANG HUIQI GRACE
Keywords: Strain, Ge condensation, mobility, transistor, Silicon-Germanium, Silicon carbon
Issue Date: 15-Oct-2009
Source: WANG HUIQI GRACE (2009-10-15). Advanced Materials And Novel Devices For CMOS Applications. ScholarBank@NUS Repository.
Abstract: Conventional transistor scaling becomes increasingly challenging beyond the 90nm technology node. New approaches for the improvement of integrated circuit performance are needed. This thesis documents novel ways to introduce strain in transistor channel. New device structure and new materials are needed to boost carrier mobility and enhance drive current. Chapter 2 of this thesis documents techniques of forming high germanium (Ge) content substrates using Ge condensation technique. Substrates with high Ge concentration could be employed in stress inducing structures or for high mobility channel transistors. Chapter 3 focuses on strained Si n-FET where tensile strain in the channel is induced by lattice mismatched Si or Si:C S/D stressors and high stress tensile nitride liner. The Si:C S/D may be potentially adopted in future technology nodes. Chapter 4 documents another new approach of having a strain transfer structure beneath the channel to couple high stress from the S/D to the channel. After the carrier mobility has been improved significantly, series resistance may become a performance limiter. In Chapter 5, we thus explore in situ doped Si0.979C0.021 S/D stressor that mitigates the need for ion implantation, and enables higher activated dopant concentration. A higher substitutional carbon concentration in Si:C was also used to increase the channel strain. Chapter 6 and 7 report the formation of SiGeSn and GeSn formed by Sn implantation and anneal. The compressive strain in the channel induced by the SiGeSn S/D increases the effective mobility of holes, and boost p-FET performance. In summary, novel devices employing novel strain engineering techniques were studied. They show promising potential for augmenting the performance of conventional CMOS transistors.
URI: http://scholarbank.nus.edu.sg/handle/10635/17670
Appears in Collections:Ph.D Theses (Open)

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