Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/17601
Title: High-K MOSFETS with high mobility channels
Authors: HUANG JIDONG
Keywords: high-k dielectrics, SiGe, MOSFETs, surface treatment, laser anneal
Issue Date: 20-Sep-2007
Source: HUANG JIDONG (2007-09-20). High-K MOSFETS with high mobility channels. ScholarBank@NUS Repository.
Abstract: This PhD study consists of two parts. The first part investigates the integration of high-?? gate dielectrics HfO2 and HfAlO on high hole mobility compressive strained-SiGe (I?-SiGe) surface channel for pMOSFET. A high-??/I?-SiGe interfacial layer contains GeOx if the dielectrics are deposited on I?-SiGe directly, whereas the interfacial layer contains no GeOx but SiNxOy if a nitridation treatment is performed on I?-SiGe prior to the dielectrics deposition. The nitridation was found to improve the electrical properties of I?-Si50Ge50 capacitors while degrade the hole mobility of I?-Si60Ge40 transistors. The second part demonstrates Ge n+/p junction formation by laser annealing. A gate-first self-aligned Al/TaN/HfO2/Ge nMOSFET with source/drain activated by laser annealing is shown to give small source/drain resistance and good gate-stack integrity simultaneously, thereby superior electrical properties than the device with traditional rapid thermal annealing.
URI: http://scholarbank.nus.edu.sg/handle/10635/17601
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