Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/17005
Title: Atomic dynamics model for nanoscale ductile mode cutting of silicon wafers
Authors: HE TAO
Keywords: wafer fabrication; ductile mode cutting; chip formation mechanism; critical chip thickness; atomistic model; tool wear;
Issue Date: 22-Mar-2005
Source: HE TAO (2005-03-22). Atomic dynamics model for nanoscale ductile mode cutting of silicon wafers. ScholarBank@NUS Repository.
Abstract: Nanoscale ductile mode cutting of single crystalline silicon is a very promising technology for fracture-free machining in wafer fabrication. The ductile chip formation mechanism is not well established yet. In this fundamental study, an atomistic model for this state-of-the-art technology is presented. In this model, a crack shielding zone (CSZ) is postulated in the cutting region, within which plastic deformation rather than brittle fracture occurs dominantly. Two parameters are introduced and a two-dimensional model is developed for the prediction of critical chip thickness. The model has been verified by comparing the predicted and measured chip thickness in machining experiments, which shows reasonable agreement. Key factors affecting the final outcome are extensively analyzed based on experimental study. Finally, further work is suggested on using molecular dynamics and simulation to study the nanoscale ductile regime cutting.
URI: http://scholarbank.nus.edu.sg/handle/10635/17005
Appears in Collections:Master's Theses (Open)

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