Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16969
Title: Study on native and extrinsic defects in p-type Zn0 semiconductors - by density functional theory and experimental methods
Authors: YU ZHIGEN
Keywords: ZnO, p-type, Dopant Source, Density Functional Theory
Issue Date: 7-Nov-2005
Source: YU ZHIGEN (2005-11-07). Study on native and extrinsic defects in p-type Zn0 semiconductors - by density functional theory and experimental methods. ScholarBank@NUS Repository.
Abstract: This thesis explores the problem of p-type ZnO semiconductor fabricating for UV light-emitting diode (LED) and UV laser applications. A systematic research on the native and extrinsic defects in ZnO is conducted by using a combined approach of computer simulation and experiment. Advance in fundamental understanding of ZnO semiconducting behaviors is achieved, through electronic structure modeling techniques, and p-n homojunction ZnO LED is successfully made using single dopant source physical vapor deposition (PVD) technique guided by the developed model. The electroluminescence on a prototype of p-n homojunction ZnO diode is observed at room temperature. This research not only solved the mystery of p-type ZnO conduction, overcame the difficulty in practical fabrication of p-n homojunction ZnO, but also successfully demonstrated a general research strategy from ab initio to tackle scientific and technological problems.
URI: http://scholarbank.nus.edu.sg/handle/10635/16969
Appears in Collections:Ph.D Theses (Open)

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