Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16952
Title: UHV deposition of Co thin films on low index Si surfaces
Authors: LIU RUISHENG
Keywords: Cobalt, Growth Mode, Diffusion, Morphology, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy (AFM)
Issue Date: 13-Jan-2005
Source: LIU RUISHENG (2005-01-13). UHV deposition of Co thin films on low index Si surfaces. ScholarBank@NUS Repository.
Abstract: XPS and AFM were used to study the effect of hydrogen on the Co-Si reaction, Co growth mode, diffusion behaviour and morphology evolution on Si(001) and Si(111) substrates. The a??Co-Sia?? reaction occurs on both H-terminated and clean surfaces. Co grows in a pseudo-layer-by-layer manner on H-terminated Si surfaces while small close-packed island growth mode is observed on the clean Si surfaces. Upon annealing, Co concentration decreases with annealing time. The presence of hydrogen appears to delay the on-set of Co diffusion. The islands formed on Si(001) surface after annealing are rectangular while triangular islands are observed on Si (111) surface.
URI: http://scholarbank.nus.edu.sg/handle/10635/16952
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