Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16718
Title: Investigation of the scalability limitations of phase change random access memory
Authors: WEI XIAOQIAN
Keywords: Semiconductor memory, phase change random access memory, chalcogenide material, scalability limitations, integrated circuit
Issue Date: 29-Dec-2008
Source: WEI XIAOQIAN (2008-12-29). Investigation of the scalability limitations of phase change random access memory. ScholarBank@NUS Repository.
Abstract: This dissertation addresses the scaling limitations of the Phase Change Random Access Memory (PCRAM) that is considered as one of the best candidates for meeting the scaling requirements for the next wave of memory technologies. Firstly, a new classification of the scalability limitations of PCRAM, including the lithography technology, the physical limitations of materials in PCRAM, the thermal-cross talk among memory cells and the current limitation of memory cells. Particular emphasis is paid to the physical limitations of the materials and the current limitation of memory cells in the thesis. To study physical limitation of the materials, a new classification of the phase change based on different interface environment is proposed. Limitations based on this classification are studied. For current limitation of memory cells, superlattice-like (SLL) PCRAM is designed, fabricated and tested. Fifty percent current reduction is demonstrated by 128-bit test chip.
URI: http://scholarbank.nus.edu.sg/handle/10635/16718
Appears in Collections:Ph.D Theses (Open)

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