Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16579
Title: Optoelectronic monolithic integration of metal-germanium- metal photodetector and Ge CMOSFETs on Si wafer
Authors: ZANG HUI
Keywords: germanium, photodetector, waveguide, MGM, transistor
Issue Date: 14-Jul-2009
Source: ZANG HUI (2009-07-14). Optoelectronic monolithic integration of metal-germanium- metal photodetector and Ge CMOSFETs on Si wafer. ScholarBank@NUS Repository.
Abstract: Silicon-based optoelectronic device is a promising candidate to replace the IIIb V compound semiconductor devices due to its low cost, ease of process, and CMOS integration compatibility. Heteroepitaxial Ge on Si provides an alternative solution for near-infrared photodetection since surface-smooth Ge epitaxial layer can be realized on Si wafer using two-step Ge growth method. Metal-germanium-metal (MGM) photodetector attracts much research interest due to its ease of fabrication, low detector capacitance, and large device bandwidth as its main advantages. This work mainly presents the development of surface-illuminated and waveguided MGM photodetectors integrated on Si substrate and their potential integration with Ge CMOSFETs.
URI: http://scholarbank.nus.edu.sg/handle/10635/16579
Appears in Collections:Ph.D Theses (Open)

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