Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16455
Title: Study on the crystalline and ferroelectric properties on PZT thin films deposited by pulsed laser deposition
Authors: ONG MING HONG, ADRIAN
Keywords: X-ray diffraction, PLD, LaNiO3,PZT, ferroelectric
Issue Date: 5-May-2004
Source: ONG MING HONG, ADRIAN (2004-05-05). Study on the crystalline and ferroelectric properties on PZT thin films deposited by pulsed laser deposition. ScholarBank@NUS Repository.
Abstract: Preferentially [h00]-oriented LaNiO3 (LNO) thin films were prepared on Si (100) wafers using KrF excimer pulsed-laser deposition. Microstructures of the deposited films were investigated using X-ray q-2q scan and pole figure or j scan. The effects of substrate temperatures from 400 to 700A?C as well as oxygen pressure from 50 to 200mTorr were also studied. LNO thin film deposited at 600A?C at 50mTorr was found to exhibit the best quality. Deposition at temperatures below 500A?C resulted in an amorphous LNO while those deposited at temperatures above 600A?C induced the formation of mixed [110] and [h00] out-of plane orientation. High O2 pressures were observed to manifest similar effects.Surface morphologies of the deposited LNO films examined using atomic force microscopy and scanning electron microscopy showed that the films had been grown with extremely smooth and crack free surfaces.Investigations done on the LNO films reveal a co-relation between the orientation and crystallinity of the LNO films and their resistivities. Highly oriented films display lower resistivity. Increasing the substrate temperature and oxygen pressure resulted in thin films that have higher resistivity values.Deposition of Pb(Zr0.52 Ti0.48)O3 films using targets doped with 10 and 20% excess PbO with LNO as the electrode and underlayer were investigated. Single oriented Lead zirconate titanate (PZT) thin films with (001) out of plane orientation were successfully deposited. The remnant polarization and coercive field obtained using a target with 20% excess PbO was 34.88mC/cm2 and 78.98 kV/cm respectively at applied voltage of +5 V. This makes it suitable for applications in DRAM and FERAM. The LNO underlayer is found to play an important role in orienting the PZT film. The substrate temperature was found to be within narrow temperature range for perovskite PZT formation without any pyrochlore phase. Oxygen pressure also plays a role in orientation of the PZT layer. PZT films deposited using PZT targets with 10wt% excess PbO and high laser fluence all display poorer ferroelectric properties.
URI: http://scholarbank.nus.edu.sg/handle/10635/16455
Appears in Collections:Master's Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Thesis-_Adrian.pdf1.41 MBAdobe PDF

OPEN

NoneView/Download

Page view(s)

294
checked on Dec 11, 2017

Download(s)

207
checked on Dec 11, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.