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Title: Thermal processing in lithography: Equipment design, control and metrology
Keywords: Lithogaphy, thermal processing, temperature control, real-time control, scatterometry, beam size
Issue Date: 6-Jul-2009
Citation: WANG YUHENG (2009-07-06). Thermal processing in lithography: Equipment design, control and metrology. ScholarBank@NUS Repository.
Abstract: Lithography is the key technology driver in semiconductor manufacturing, and the most important variable to be controlled in lithography is the critical dimension (CD) uniformity. As the final CD value is very sensitive to the wafer temperature during the thermal processing steps in lithography, it is important to control the wafer spatial temperature uniformity for enhancing the CD uniformity. An in-situ real-time model-based control method is proposed to minimize wafer temperature nonuniformity in the whole heating process; To guarantee the temperature uniformity during the whole thermal cycle, a novel design of bake/chill integrated thermal processing module to achieve rapid dynamic response and good wafer temperature controllability is developed. In real-time process control system, it is important to characterize metrology system to enable the application of APC in lithography. We investigate the beam size effect of scatterometer on photoresist thickness and CD measurement.
Appears in Collections:Ph.D Theses (Open)

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