Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16234
Title: Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure
Authors: ZHANG QINGCHUN
Keywords: Germanium, MOSFET, High-κ gate dielectric, Junction, Laser annealing, Nickel Germanide
Issue Date: 12-Jun-2007
Source: ZHANG QINGCHUN (2007-06-12). Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure. ScholarBank@NUS Repository.
Abstract: This work investigated the material properties and electrical performance of Ge MOSFET with high-I? gate dielectric to access its feasibility as alternative channel material for high-scaled CMOS device.The thermal stability of Ge MOS device with high-I? gate dielectric was firstly explored. The results show that the thermal budget of processing is critical for Ge device fabrication. Germanium diffusion in high-I? gate dielectric is proposed as the root of Ge device degradation. The dependence of Ge incorporation in HfO2 on process conditions and its impact on electrical properties were studied.Laser annealing was introduced as a superior source/drain activation technique. By selective annealing S/D areas, good gate stack integrity, shallow junction depth and small S/D series resistance were achieved simultaneously.The formation and thermal stability of nickel germanide as self-aligned source/drain contact were systematically examined. Improved drive current of Ge diode with NiGe contact is demonstrated without degrading leakage current.
URI: http://scholarbank.nus.edu.sg/handle/10635/16234
Appears in Collections:Ph.D Theses (Open)

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