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Title: Dielectric characterization and dopant profile extraction using scanning capacitance microscopy
Keywords: Scanning Capacitance Microscopy Dopant Profile Extraction
Issue Date: 18-Apr-2007
Citation: WONG KIN MUN (2007-04-18). Dielectric characterization and dopant profile extraction using scanning capacitance microscopy. ScholarBank@NUS Repository.
Abstract: Scanning capacitance microscopy (SCM) is developing into an important, non-destructive, nano-characterization technique for dopant profiling and characterization of submicrometer semiconductor structures as it possesses high spatial resolution of less than 10 nm. This work investigates the application of SCM for dopant profiling on p-n junctions, with the objective of developing an accurate quantitative model for extraction of dopant concentration from two-dimensional SCM measurements. The contrast reversal effect, which affects the accuracy of SCM dopant profile extraction, was also investigated in this work. In addition to dopant profiling, the SCM technique was also applied to the characterization of the overlying oxide layer on the semiconductor sample where it was shown that the full-width at half-maximum (FWHM), of the SCM dC/dV peak is correlated with the trap density (Dit) at the oxide-semiconductor interface. A theoretical model was developed in this work to allow Dit to be obtained from the extracted FWHM values.
Appears in Collections:Ph.D Theses (Open)

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