Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/16060
Title: Non-volatile molecular memory in silicon IC application
Authors: TAN YOKE PING
Keywords: heterojunction, polymer, rectifying, silicon, memory, conductivity
Issue Date: 25-Jun-2008
Source: TAN YOKE PING (2008-06-25). Non-volatile molecular memory in silicon IC application. ScholarBank@NUS Repository.
Abstract: The thesis focuses on a novel memory device structure incorporating polymer film as the switching medium in memory devices, contrary to the conventional floating gate memory. In my work, an attempt was made to fabricate memory devices on silicon substrates using polymer film as the switching element. Electrical tests are performed on the devices to access their switching performances and retention stability, which include: voltage sweep test, constant voltage stress test and read pulse cycles test. Chemical tests such as ultraviolet absorption spectrum and cyclic voltammetry tests are also conducted to access the redox potential and energy levels of the polymer.
URI: http://scholarbank.nus.edu.sg/handle/10635/16060
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