Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15856
Title: Threshold voltage instabilities in MOS transistors with advanced gate dielectrics
Authors: SHEN CHEN
Keywords: MOS, transistor, reliability, characterization, charge trapping, NBTI
Issue Date: 27-Apr-2009
Source: SHEN CHEN (2009-04-27). Threshold voltage instabilities in MOS transistors with advanced gate dielectrics. ScholarBank@NUS Repository.
Abstract: This thesis examines the dominant Vth instability mechanisms in two advanced gate dielectric materials, namely the nitrided silicon oxide (or silicon oxynitride), and the hafnium oxide. Negative bias temperature instability and charge trapping phenomena in these two dielectric o, lms are the focus of this study, and form the main chunk of this thesis.
URI: http://scholarbank.nus.edu.sg/handle/10635/15856
Appears in Collections:Ph.D Theses (Open)

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