Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15828
Title: Strain engineering for advanced transistor structure
Authors: TAN KIAN MING
Keywords: FinFET, Strain, Diamond-Like Carbon, DLC, SiGe
Issue Date: 14-May-2009
Source: TAN KIAN MING (2009-05-14). Strain engineering for advanced transistor structure. ScholarBank@NUS Repository.
Abstract: In this thesis, various ideas on strain techniques are explored to further enhance FinFET device performance. The effect of having a SiN capping layer on a tantalum nitride (TaN) metal gate FinFET during source/drain anneal (S/D) was studied. Enhancement in drive current is attributed to the difference in thermal expansion of the various materials. Performance improvement in FinFET with SiGe raised S/D is further achieved with the used of Ge condensation technique and also a novel extended-pi shaped SiGe S/D. In addition, a new CESL liner material, diamond-like carbon (DLC) is also introduced. This material is found to exhibits a much greater intrinsic compressive stress than SiN ever reported. The properties of DLC are characterized and enhancement in drive current on p-channel planar SOI, FinFET and also bulk devices are demonstrated experimentally. Performance of devices in this work is thus greatly enhanced over the control devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/15828
Appears in Collections:Ph.D Theses (Open)

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