Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15696
Title: A modeling study of ion implantation in crystalline silicon involving Monte Carlo and molecular dynamics methods
Authors: CHAN HAY YEE, SERENE
Keywords: Ion Implantation Monte Carlo Molecular Dynamics
Issue Date: 19-Dec-2006
Source: CHAN HAY YEE, SERENE (2006-12-19). A modeling study of ion implantation in crystalline silicon involving Monte Carlo and molecular dynamics methods. ScholarBank@NUS Repository.
Abstract: Precise modelling of dopant distributions after ion implantation has been commonly achieved by Monte Carlo (MC) models based on the Binary Collision Approximation (BCA). Molecular Dynamics (MD) is set to replace BCA in the low energy regime. MD not only accounts for binary collisions between ion and the immediate target atom, it counters the limitation in BCA by accounting for simultaneous multiple collisions between ion and neighboring target atoms. In this thesis, MD coupled with the Recoil Ion Approximation (RIA) is employed for the implant simulation of a wide range of industrially important dopants (B, C, N, F, P, Ge, As, In and Sb) in crystalline silicon. The code is validated by experimental profiles measured by Secondary Ion Mass Spectrometry (SIMS). A comprehensive low energy SIMS database has been set up for this purpose; different mass analyzers have also been used to ascertain the capabilities and limitations of various instruments.
URI: http://scholarbank.nus.edu.sg/handle/10635/15696
Appears in Collections:Ph.D Theses (Open)

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