Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15606
Title: Identification of defects in GaN and its ternary and quaternary alloy grown on different substrates
Authors: SOH CHEW BENG
Keywords: GaN, AlyInxGa1-x-yN, dislocation, deep level defects, V-pits, yellow luminescence
Issue Date: 22-Sep-2006
Source: SOH CHEW BENG (2006-09-22). Identification of defects in GaN and its ternary and quaternary alloy grown on different substrates. ScholarBank@NUS Repository.
Abstract: Defects in GaN introduce deep transition levels which degrade the electrical and optical characteristics of devices. In this work, deep and shallow defect levels in GaN associated with intrinsic defects, dislocations and yellow luminescence transitions have been investigated. Comparison of samples grown on high quality strain released GaN overgrown on cracked AlGaN with conventional GaN enables the identification of deep levels associated with dislocations. Shallow levels attributed to Si dopant, O impurities and the nitrogen vacancies (VN) are also found in GaN. O impurities tend to occupy the VN site to give ON antisite. The deep donor band attributed to ON antisite combined with the deep acceptor level of VGa to form the VGa-ON complex along the dangling bond of threading dislocation. This gives high yellow band emission, especially at the V-pits in InGaN/GaN heterostructure, which is reduced by growing GaN film on strain-released crack AlGaN template.
URI: http://scholarbank.nus.edu.sg/handle/10635/15606
Appears in Collections:Ph.D Theses (Open)

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title page.pdf13.17 kBAdobe PDF

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Abstract.pdf28.69 kBAdobe PDF

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ACKNOWLEDGEMENTS.pdf13.39 kBAdobe PDF

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Table of Contents.pdf20.25 kBAdobe PDF

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List of Figures_sub.pdf189.08 kBAdobe PDF

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List of Tables.pdf26.21 kBAdobe PDF

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List of publications.pdf29.13 kBAdobe PDF

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Chp1_Introduction.pdf58.48 kBAdobe PDF

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Chp2_Background of Defects in GaN grown on foreign substrate.pdf372.57 kBAdobe PDF

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Chp3 GrowthTechniques.pdf431.66 kBAdobe PDF

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Chp4_Experimental Techniques_.pdf552.83 kBAdobe PDF

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Chp 5_Result and Discussion.pdf2.31 MBAdobe PDF

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Chp 6_Result and Discussion.pdf1.23 MBAdobe PDF

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Chp 7_Result and Discussion.pdf1.75 MBAdobe PDF

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Chp 8_Conclusions and References.pdf168.08 kBAdobe PDF

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