Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15501
Title: Study of strain relaxation in semiconductors by convergent beam electron diffraction
Authors: TOH SUEY LI
Keywords: convergent beam electron diffraction, uniaxial and biaxial strain, etch-stop layer, trench structures, silicidation, SiGe/Si heterostructures
Issue Date: 23-Oct-2006
Source: TOH SUEY LI (2006-10-23). Study of strain relaxation in semiconductors by convergent beam electron diffraction. ScholarBank@NUS Repository.
Abstract: Towards the end of the roadmap, strain engineering replaces geometric scaling to extend Moorea??s law beyond each technology node. However, the deliberate addition of stress into devices has to be carried out carefully. This at the same time introduces challenges to the existing stress metrology methods as localized stress measurement becomes more important. Nevertheless, the capability of convergent beam electron diffraction to resolve lattice strain locally, allows us to modify the strain in the region of interest by varying the processing parameters or the dimensions of the surrounding features. In this thesis, we have detailed a simple and robust sample preparation procedure for CBED strain measurement. Using the assumption of uniaxial strain, we have made modifications to overlay nitride films, silicide formation and trench structures to relieve the mechanical stress in the substrate. Besides these, we have also investigated the interfacial relaxation mechanisms in SiGe/Si heterostructures using biaxial strain analysis.
URI: http://scholarbank.nus.edu.sg/handle/10635/15501
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3.Acknowledgements.pdf42.43 kBAdobe PDF

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4.Table of contents.pdf49.78 kBAdobe PDF

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5.Summary.pdf40.28 kBAdobe PDF

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6.List of Tables.pdf36.41 kBAdobe PDF

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7.List of Figures.pdf155.47 kBAdobe PDF

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8.List of Abbreviations.pdf39.28 kBAdobe PDF

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9.List of Publications & List of Conference Presentations.pdf91.32 kBAdobe PDF

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10.Chapter01.pdf5.1 MBAdobe PDF

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11.Chapter02.pdf8.56 MBAdobe PDF

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