Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15410
Title: Hf-based high-K gate dielectric on high mobility channel for advanced CMOS devices
Authors: YEO CHIA CHING
Keywords: Hafnium, high-K, dielectric, mobility, Silicon, Germanium
Issue Date: 28-May-2006
Source: YEO CHIA CHING (2006-05-28). Hf-based high-K gate dielectric on high mobility channel for advanced CMOS devices. ScholarBank@NUS Repository.
Abstract: Si migration into HfO2 was found to enhance during low oxygen partial pressure annealing, forming lower permittivity silicates with increased crystallization temperature. Nitrogen incorporation further improved the crystallization temperature, though Hf-N bonds were shown to be broken after 950oC annealing. A new multi-step deposition technique, whereby the final gate stack consists of multi-layers HfO2 deposited and annealed independently was introduced. This technique was demonstrated to successfully a??offseta?? the grain boundaries from one layer to another, and therefore reduces leakage current. High-K MOSFETs were built on an ultrathin Ge on Si substrate, capped with thin Si layer to improve mobility. Enhancement in peak electron mobility was achieved whereas for pMOSFET, enhancement was observed at high field. Good gate dielectric and junction properties were demonstrated. Finally, thermal stability of Si/Ge/Si and strained Si/Si1-xGex devices were examined, showing drivability lowering for Si/Ge/Si devices after annealing, while strained Si/Si1-xGex devices show no drivability degradation.
URI: http://scholarbank.nus.edu.sg/handle/10635/15410
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
1. Cover Page.pdf8.61 kBAdobe PDF

OPEN

NoneView/Download
2. Acknowledgments.pdf11.75 kBAdobe PDF

OPEN

NoneView/Download
3. Table of Contents.pdf22.6 kBAdobe PDF

OPEN

NoneView/Download
4. Summary.pdf25.59 kBAdobe PDF

OPEN

NoneView/Download
5. List of Symbols.pdf80.16 kBAdobe PDF

OPEN

NoneView/Download
6. List of Figures.pdf107.86 kBAdobe PDF

OPEN

NoneView/Download
7. List of Tables.pdf10.37 kBAdobe PDF

OPEN

NoneView/Download
Chapter 1 Introduction.pdf135.13 kBAdobe PDF

OPEN

NoneView/Download
Chapter 2 Literature Review.pdf467.77 kBAdobe PDF

OPEN

NoneView/Download
Chapter 3 Thermal Stability of MOCVD High-K.pdf315.02 kBAdobe PDF

OPEN

NoneView/Download
Chapter 4 Multiple Step Desposited High-K.pdf232.69 kBAdobe PDF

OPEN

NoneView/Download
Chapter 5 SGS MOSFET.pdf922.52 kBAdobe PDF

OPEN

NoneView/Download
Chapter 6 Thermal Stability of SGS and Strained Si MOSFETs.pdf513.04 kBAdobe PDF

OPEN

NoneView/Download
Chapter 7 Conclusion.pdf40.84 kBAdobe PDF

OPEN

NoneView/Download
Appendix A Publication List.pdf18.01 kBAdobe PDF

OPEN

NoneView/Download

Page view(s)

325
checked on Dec 11, 2017

Download(s)

2,231
checked on Dec 11, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.