Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15379
Title: Interfaces at crystalline metal gate/high-k oxide/Si stacks: Characterizations and atomistic modeling
Authors: DONG YUFENG
Keywords: high-k dielectric, metal gate, x-ray photoemission spectroscopy, transmission electron microscopy, first-principles calculations
Issue Date: 19-Jul-2006
Source: DONG YUFENG (2006-07-19). Interfaces at crystalline metal gate/high-k oxide/Si stacks: Characterizations and atomistic modeling. ScholarBank@NUS Repository.
Abstract: Characteristics of interfaces at crystalline metal/high-k oxide/silicon stacks have been studied by combined methods of x-ray photoemission spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and first-principles calculations based on density functional theory (DFT).The epitaxial ZrO2/Si (001) interface structure grown by pulsed laser deposition (PLD) was determined using HRTEM. The interface band alignment at the epitaxial ZrO2/Si interface was accurately measured by XPS. Meanwhile, various interface structures based on the HRTEM images have been studied by first-principles calculations.For the metal gate/high-k oxide interface, the effective work functions (WF) of metal gate were found to be tunable by controlling the interface structures or chemical species. The results provide a practical way of modifying the band alignments for metal gate/high-k oxide interfaces to satisfy the engineering requirement for the metal gate technology.
URI: http://scholarbank.nus.edu.sg/handle/10635/15379
Appears in Collections:Ph.D Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
PhD-thesis-DongYF.pdf4.27 MBAdobe PDF

OPEN

NoneView/Download

Page view(s)

278
checked on Dec 11, 2017

Download(s)

326
checked on Dec 11, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.