Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15358
Title: Application of ion implantation to the fabrication of GAN-based devices
Authors: WANG HAITING
Keywords: implantation, activation, beryllium, AlGaN/GaN HEMTs, current drive, gate control.
Issue Date: 16-Jun-2006
Source: WANG HAITING (2006-06-16). Application of ion implantation to the fabrication of GAN-based devices. ScholarBank@NUS Repository.
Abstract: Silicon (n-type) implantation into GaN samples and its activation were successfully carried out in this work. A reasonably high activation percentage was achieved although the optical recovery of the implanted samples was partial. Beryllium implantation into GaN for p-type doping was also performed. The results showed p-type conversion after pulsed laser annealing, which was confirmed by the Hall measurement and photoluminescence. Finally, Si implantation was integrated into the fabrication of AlGaN/GaN high electron mobility transistors (HEMTs) in order to create selectively doped regions for the source and drain areas. The experimental results showed that overall device characteristics including current drive, gate control property and high frequency performance were significantly improved with Si ion implantation. This will tap HEMTs advantages of high power, high current and low access resistance to the maximum extent.
URI: http://scholarbank.nus.edu.sg/handle/10635/15358
Appears in Collections:Ph.D Theses (Open)

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