Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/15008
Title: Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications
Authors: KOH BIH HIAN
Keywords: Germanium nanocrystal;Flash memory;Nonvolatile memory;High-k dielectric materials;Quantum mechanical modeling;Novel tunnel barriers
Issue Date: 29-Nov-2005
Source: KOH BIH HIAN (2005-11-29). Modeling and characterization of high dielectric constant tunnel barriers for nanoelectronic applications. ScholarBank@NUS Repository.
Abstract: Nonvolatile nanocrystal memory has attracted attention since the availability of nanofabrication technology. However, charge retention times of nanocrystal memories reported in the literature are still relatively poor. This work explores the possibility of improving the charge retention performance of nanocrystal memory through the use of high dielectric constant tunnel barriers and trap engineering. By using a crested barrier structure as the tunnel barrier, a high electric field sensitivity can be achieved which would enable both fast charging and long charge retention. Possible crested barrier structures have been proposed and the design of such structures is investigated through quantum mechanical modeling. Based on the experimentally observed temperature dependence in the charge retention times, the discharging mechanism of our germanium (Ge) nanocrystal memory devices have been attributed to a trap-related emission process. Investigation of trap energy levels in Ge nanocrystal memory structures and their effect on the device charging and discharging kinetics are carried out through theoretical modeling and experimental measurements. The trap energy level requirement for achieving a specified long-term charge retention performance (i.e., 10-year retention time) is obtained from simulation as a function of the nanocrystal size.
URI: http://scholarbank.nus.edu.sg/handle/10635/15008
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