Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14920
Title: Characterization of hot carrier reliability in deep submicronmeter MOSFETs
Authors: LIAO HONG
Keywords: MOSFET, hot carrier effect, reliability, gate oxide, interface, degradation
Issue Date: 16-Nov-2005
Source: LIAO HONG (2005-11-16). Characterization of hot carrier reliability in deep submicronmeter MOSFETs. ScholarBank@NUS Repository.
Abstract: This research aims to advance the understanding of several key aspects of the device reliability of deep submicrometer CMOS devices.The impact of indium channel implantation on the current-voltage characteristics, gate oxide breakdown and hot carrier reliability of deep submicrometer n-MOSFET is studied in detail. The reliability of 0.18 um n-MOSFETs stressed under hot carrier injection and enhanced by substrate bias, is studied. The manipulation of high-energy tail electrons (HETEs) via substrate bias is used as a scientific tool to probe the fundamental mechanisms governing the interface and oxide degradation. New experimental evidence provides important insights into the basic mechanism responsible for the shift of the worst-case stress condition in scaled MOSFETs. The role of HETEs in the continued existence of the hot electron gate current and the impact of a non-local hot electron injection on the predominant source-side gate oxide degradation are studied.
URI: http://scholarbank.nus.edu.sg/handle/10635/14920
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