Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14791
Title: Integration of silicon nanowires in MOS technology
Authors: POIZAT JULIEN
Keywords: Ge nanowires, Silicon nanowires, VLS, CMOS, Langmuir-blodgett, CVD
Issue Date: 3-Jun-2005
Source: POIZAT JULIEN (2005-06-03). Integration of silicon nanowires in MOS technology. ScholarBank@NUS Repository.
Abstract: Since few years, nanowires are attractive for microelectronics to overcome the limitations of the current technology based on the silicon bulk materials. Nanowires have already been assembled in transistor which revealed pretty interesting electrical properties almost equal to the state-of-the-art of MOS process without optimization. The process to build a Nanowires-transistor was studied. Several points were highlighted: the process of the growth, the mechanism of Nanowire-FET and the issues we will have to overcome. Since the scale of the device is going near the atomic structure, some theoretical issues have been studied to know if the electrical characteristics of silicon nanowires follow the scale law. These studies have highlighted that these structures did not obey the classical law of physics.
URI: http://scholarbank.nus.edu.sg/handle/10635/14791
Appears in Collections:Master's Theses (Open)

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