Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14747
Title: Physical characterization of HfO2 & HfO2-Al2O3 alloy thin films
Authors: TOK KWEE LEE
Keywords: high-k dielectric, atomic layer deposition, thermal stability, XPS, SIMS, diffusion
Issue Date: 31-May-2005
Source: TOK KWEE LEE (2005-05-31). Physical characterization of HfO2 & HfO2-Al2O3 alloy thin films. ScholarBank@NUS Repository.
Abstract: Due to its high dielectric constant, HfO2 (k~20) is a potential candidate for gate oxide replacement. However, as HfO2 is not so thermally stable and crystallizes at about 400C, Al2O3 was co-deposited with HfO2 to obtain an alloy that is more resilient to crystallization. In this work, we investigate the physical characteristics of HfO2 and HfO2-Al2O3 alloy thin films (~20nm) prepared by ALCVD. Samples were deposited on p-type Si(100) substrate at 300C. Their composition was first determined using RBS and XPS. Glancing incidence XRD (GI-XRD) was then employed to study the microstructure and thermal stability of HfO2 and HfO2-Al2O3 alloy thin films that were annealed using RTP for temperature up to 1000C. The effect of thermal annealing on precursor contamination and interdiffusion of silicon in the thin films were then investigated using SIMS.
URI: http://scholarbank.nus.edu.sg/handle/10635/14747
Appears in Collections:Master's Theses (Open)

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