Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14706
Title: Alloy effects on nickel silicides formation and the investigation of NiSi as electrode material of ZnO devices
Authors: REN WEI
Keywords: NiSi, alloy, silicide, ZnO, sputtering, anneal
Issue Date: 22-Mar-2005
Source: REN WEI (2005-03-22). Alloy effects on nickel silicides formation and the investigation of NiSi as electrode material of ZnO devices. ScholarBank@NUS Repository.
Abstract: Nickel silicide (NiSi) is a potential contact material for 90 nm or below feature size ULSI devices, due to its lower resistivity, lower Si consumption, independency with line width, and compatibility with SiGe-based technology. However, application of NiSi in industry still faces two big problems: the poor thermal stability and serious sensitivity to oxide contaminants. In this work, adding minor Pt into Ni facilitates NiSi formation by reducing oxide contaminant at a relatively low temperature (600 A?C) annealing. Further, the effects of simultaneously adding Pt and Ti into Ni are studied to address both stability and oxide sensitivity problems during NiSi formation.Besides, high quality ZnO films are grown on both NiSi and Si surfaces and their structural and optical properties indicate that NiSi is a potential contact material for ZnO device. And the optical absorption and reflection of the ZnO/NiSi and ZnO/Si structures are calculated.
URI: http://scholarbank.nus.edu.sg/handle/10635/14706
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