Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14604
Title: Surface processing of nanoporous low dielectric constant thin films
Authors: LIU JUN
Keywords: Low-k, Porosity, Plasma treatment, Densified layer, Diffusion Barrier and BN
Issue Date: 7-Mar-2005
Source: LIU JUN (2005-03-07). Surface processing of nanoporous low dielectric constant thin films. ScholarBank@NUS Repository.
Abstract: In this work, several kinds of surface processing have been carried out on MSQ-based porous low-k films in resolving some key issues in the low-k materials and copper damascene integration. Nanoporous low-k films were treated by using low frequency NH3 plasma in order to form a surface densified layer, which can effectively seal the porous films. The plasma treatment process has been optimized and applied for two kinds of low-k films. Both the sealing efficiency and the barrier performance against Cu diffusion have been evaluated after the plasma treatment.Hexagonal Boron Nitride (h-BN) films have also been deposited on porous low-k film to develop a new type of low-k dielectric barrier against Cu diffusion. Both Microwave Plasma CVD (2.45 GHz) and Radio-frequency plasma atom beam deposition (13.56 MHz) were applied for the h-BN deposition in order to evaluate the compatibility of the two plasma processes with the nanoporous films.
URI: http://scholarbank.nus.edu.sg/handle/10635/14604
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