Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14588
Title: Characterization of electromigration defects using scanning thermal microscopy
Authors: ZHENG XINHUA
Keywords: Interconnect, Scanning Thermal Microscopy, Temperature Distribution, Electromigration, Topographic Effects, EBID Tip Growth
Issue Date: 24-Mar-2005
Source: ZHENG XINHUA (2005-03-24). Characterization of electromigration defects using scanning thermal microscopy. ScholarBank@NUS Repository.
Abstract: The continued scaling of the integrated circuit devices results in increased heat dissipation resulting in thermal-related reliability challenges. Thermal issues associated with interconnects require particular attention due to reduced interconnect pitch, increased number of metal levels, and introduction of low dielectric constant materials of poor thermal conductivity. Temperature measurement using scanning thermal microscopy (SThM) can achieve high spatial resolution of less than one hundred nanometers and temperature resolution of a few milli-Kelvin. In this project, quantitative measurements of temperature distribution of interconnects with different passivation thickness at different current densities were achieved using SThM. Thermal distributions around interconnect voids induced by electromigration stress were characterized and correlated with physical void structures. Techniques to significantly reduce topographic artifacts in SThM temperature measurements were developed. Improvements of spatial resolution were achieved by depositing a high-aspect ratio tip on an existing thermal probe using electron beam induced deposition technique.
URI: http://scholarbank.nus.edu.sg/handle/10635/14588
Appears in Collections:Master's Theses (Open)

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