Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14566
Title: MOCVD growth and characterization of InGaN quantum structures
Authors: ZHANG JI
Keywords: MOCVD, InGaN, quantum dot, quantum well, LED, LDs
Issue Date: 13-May-2005
Source: ZHANG JI (2005-05-13). MOCVD growth and characterization of InGaN quantum structures. ScholarBank@NUS Repository.
Abstract: ABSTRACT MOCVD growth of InGaN quantum well and quantum dot structures was investigated in this work. It was found that the formation of In metal droplets was the main reason limiting the InN content and crystal quality for InGaN at reduced growth temperature. This greatly limits the function of increasing In/Ga ratio and reducing growth temperature to enhance the InN content. It was also found that built-in polarization electric field became important as the well width was increased. It was proposed that insertion of one monolayer AlN at the interface between lower barrier and well could suppress the density of localized state. Additionally, it was found the inserted AlN monolayer could eliminate one shallow nonradiative recombination channel. The nanometer scale InGaN quantum dot were grown successfully with and without anti-surfactant. Strong PL emissions were also observed from the quantum-dot structures. The study of the growth and control of InGaN quantum well and quantum dot structures may be applied in III-nitride light emitting devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/14566
Appears in Collections:Ph.D Theses (Open)

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