Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14563
Title: Deposition of Ni2MnGa thin films via magnetron RF co-sputtering of NiMn/NiGa
Authors: LIU HUILIANG
Keywords: Ni2MnGa, Co-Sputtering, Oriented Growth, Martensitic Transformation, Annealing, Crystallinity
Issue Date: 23-May-2005
Source: LIU HUILIANG (2005-05-23). Deposition of Ni2MnGa thin films via magnetron RF co-sputtering of NiMn/NiGa. ScholarBank@NUS Repository.
Abstract: Oriented Ni2MnGa thin films were deposited by magnetron co-sputtering of NiMn/NiGa on glass, (001) silicon and SiO2/Si. Chemical composition was found to be changed with sputtering powers but was independent of the post annealing process. XRD investigation demonstrated that the as-deposited films are partially crystalline and can be further crystallized through RTA and conventional vacuum annealing. However, RTA and conventional vacuum annealing have different effects on the oriented growth of the films. RTA assisted the oriented growth of the films while the conventional vacuum annealing weakened the preferred orientation. DSC revealed that as-sputtered Ni2MnGa thin films exhibited reversible martensitic transformation upon cooling and heating as its bulk counterparts. With increase in sputtering time, the (220)A preferred growth became stronger. When substrate temperature was increased, the sputtered films showed higher crystallinity. For the as-deposited films sputtered at room temperature and at any power applied, the films showed low crystallinity.
URI: http://scholarbank.nus.edu.sg/handle/10635/14563
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