Characterization of silicon germanium systems using nuclear microscopy techniques

Abstract

The scope of this thesis is on the characterization of SiGe systems using nuclear microscopy techniques. Various other non-nuclear techniques are also used to complement the information obtained. Strain relaxed Si1-xGex virtual substrates have a wide range of applications in microelectronic and optoelectronic devices. In this work, high quality strain relaxed SiGe layers are grown using a modified gas source molecular beam epitaxy system. Various material properties were investigated in order to optimize the growth processes and conditions. Channeling contrast microscopy, which provides both depth and lateral resolved channeling yield information, is used to determine the micro-structural characteristics of such samples. The results of the analysis are discussed incorporating the strain relaxation effects. Graded, strained SiGe layers several microns thick, used as an alternative method for proton beam bending, are also investigated. Small lattice rotations in such layers were determined using the beam rocking method.