Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14508
Title: Characterization of silicon germanium systems using nuclear microscopy techniques
Authors: SENG HWEE LENG, DEBBIE
Keywords: silicon germanium, virtual substrates, gas source molecular beam epitaxy, strain relaxation, channeling contrast microscopy, beam rocking
Issue Date: 31-Jan-2005
Source: SENG HWEE LENG, DEBBIE (2005-01-31). Characterization of silicon germanium systems using nuclear microscopy techniques. ScholarBank@NUS Repository.
Abstract: The scope of this thesis is on the characterization of SiGe systems using nuclear microscopy techniques. Various other non-nuclear techniques are also used to complement the information obtained. Strain relaxed Si1-xGex virtual substrates have a wide range of applications in microelectronic and optoelectronic devices. In this work, high quality strain relaxed SiGe layers are grown using a modified gas source molecular beam epitaxy system. Various material properties were investigated in order to optimize the growth processes and conditions. Channeling contrast microscopy, which provides both depth and lateral resolved channeling yield information, is used to determine the micro-structural characteristics of such samples. The results of the analysis are discussed incorporating the strain relaxation effects. Graded, strained SiGe layers several microns thick, used as an alternative method for proton beam bending, are also investigated. Small lattice rotations in such layers were determined using the beam rocking method.
URI: http://scholarbank.nus.edu.sg/handle/10635/14508
Appears in Collections:Ph.D Theses (Open)

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