Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14474
Title: Modelling and characterization of the quantum dot floatiing gate flash memory
Authors: ZHOU KAIHONG
Keywords: Quantum Dot, Flash Memory, Self-consistent Solution, High-k Dielectric
Issue Date: 18-Feb-2005
Source: ZHOU KAIHONG (2005-02-18). Modelling and characterization of the quantum dot floatiing gate flash memory. ScholarBank@NUS Repository.
Abstract: This thesis discusses the physics, modeling and design issues of the nanoscale quantum dot flash memory. The characteristics of the flash memory device with one quantum dot floating gate are predicted successfully for the purpose of design. The advantages and applicability of emerging dielectric and quantum dot materials are demonstrated and quantified using simulation for the first time.The characterization of the quantum dot floating gate flash memory is investigated by a self-consistent solution of Schr??dinger- Poisson equation. The tunneling current of the flash memory is calculated by a semi-classical WKB approximation. The programming and retention times are evaluated to the calability of the tunnel oxide. Studies are further extended to the applicability and advantages of high-k dielectrics,including HfO2 and HfAlO. The impact of Ge and SiGe quantum dot on the retention time of the flash memory is also studied. This research work gives a comprehensive and detailed simulation of the quantum dot flash memory device with emerging materials. Based on this quantum modelling, ideal quantum dot flash memory device is finally proposed.
URI: http://scholarbank.nus.edu.sg/handle/10635/14474
Appears in Collections:Master's Theses (Open)

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