Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14427
Title: Direct observations of nickel silicide formation on (100) Si and Si0.75Ge0.25 substrates using in-situ transmission electron microscopy
Authors: RAMESH NATH S/O PREMNATH
Keywords: nickel silicide, transmission electron microscope, in situ, agglomeration, nucleation, surface relaxation
Issue Date: 11-Mar-2005
Source: RAMESH NATH S/O PREMNATH (2005-03-11). Direct observations of nickel silicide formation on (100) Si and Si0.75Ge0.25 substrates using in-situ transmission electron microscopy. ScholarBank@NUS Repository.
Abstract: There is considerable interest in the use of NiSi for future ULSI technology due to the lower silicon consumption and reduced temperature of formation. A severe disadvantage for NiSi thin layers, however, is the propensity for agglomeration above ~400A?C and transformation to the high-resistivity nickel disilicide phase between 650 and 750A?C. In this work, we have used a modified TEM for in-situ studies of the thermal reaction of Ni thin films on (100) Si and Si0.75Ge0.25 substrates. Real-time direct observations of the formation and agglomeration of nickel monosilicide films, followed by the mechanism of the nucleation of NiSi2 at higher temperatures in both cases were made. This transformation has not been observed previously in the case of Si1-xGex substrates, the reaction being suppressed from 650A?C to ~950A?C in the presence of Ge. Our data provides strong evidence of the importance of surface relaxation in the relief of transformation-induced strain.
URI: http://scholarbank.nus.edu.sg/handle/10635/14427
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