Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14331
Title: Study of TMCTS based PECVD carbon-doped low dielectric constant material
Authors: XIE JIELIN
Keywords: Low-Dielectric constant; PECVD; TMCTS; Carbon doped; Thermal stability; Plasma
Issue Date: 1-Oct-2004
Source: XIE JIELIN (2004-10-01). Study of TMCTS based PECVD carbon-doped low dielectric constant material. ScholarBank@NUS Repository.
Abstract: Carbon-doped silicon oxide low dielectric constant material is one of good dielectric candidates for advanced interconnect technology. In this thesis, thermal treatment (from annealing temperature 400oC to 800oC in N2), 1% dilute HF treatment and plasma treatment on TMCTS based PECVD carbon doped low-k materials (CORAL) were studied. A variety of characterization methods, including SEM, AFM, FTIR, XPS, SIMS, TGA, TPD, Therma-Wave opti-probe, FSM stress measurement system and SSM 495 C-V system were employed to study the structural, chemical and optical properties of the CORAL upon various treatments. From the study of thermal treatments, the thermal stability temperature of the CORAL film is found to be 600oC. At above 600oC annealing, the thermal energy can break Si-CH3, Si-C, Si-H and C-H bonds, and leads to outgasing, which results in film composition change, weight loss and thickness shrinkage. The Film composition changes, especially the carbon loss and oxygen incorporation, can degrade the film reliability extremely. Carbon is desorbed in the form of CH4, CO and other hydrocarbon.Upon the dilute-HF treatment, chemical structure of CORAL film was kept stable except that some Si-O bonds were broken. The K value of the CORAL film was found to decrease by about 14% due to the dilute HF etching. Hole trapping sites were introduced at the interface of Si/CORAL after etching, resulting in the increase of leakage currents. The CORAL film remained stable after the fluoride-gas, NH3 and He plasma treatments, whereas it was unstable after the H2/N2 and O2 plasma treatments. The generation of silicon dangling bonds and the OH bond incorporation may be the main reasons for the instability of the CORAL film after the plasma treatments.
URI: http://scholarbank.nus.edu.sg/handle/10635/14331
Appears in Collections:Master's Theses (Open)

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