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Title: Structural and electrical characterisations of amorphous silicon carbide films
Keywords: RF Sputtering; Annealing; FTIR; XPS; Amorphous Silicon Carbide; Interface Trapped Density.
Issue Date: 17-Jan-2005
Citation: HAN LIEW JUAN (2005-01-17). Structural and electrical characterisations of amorphous silicon carbide films. ScholarBank@NUS Repository.
Abstract: The characterisation of r.f. sputtered amorphous silicon carbide films prepared under different sputtering conditions and the effects of furnace and rapid thermal annealing (RTA) on the properties of the films were investigated. Infrared (IR) and x-ray photoelectron spectroscopy (XPS) results showed that annealing causes an increase in Si-C bond formation. The stoichiometry of the films varied very slightly with annealing. The current conduction mechanisms of the films were identified to be either emission over a potential barrier or a combination of both the multi-tunneling capture emission model and emission over a potential barrier at the low field region. The conductance results showed that the effect of annealing on the interface trapped density (Dit) for the unhydrogenated films can be explained using results obtained from the IR and XPS. Lorenztian components were found in the noise spectra for the as-prepared films and only 1/f noise was observed in the annealed samples.
Appears in Collections:Master's Theses (Open)

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