Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14293
Title: High resolution backside SIMS depth profiling
Authors: YEO KWEE LIANG
Keywords: Backside SIMS, Backside silicon etching, Ultra shallow depth profiling, Boron penetration, MRI model, Boron diffusion.
Issue Date: 18-Oct-2004
Source: YEO KWEE LIANG (2004-10-18). High resolution backside SIMS depth profiling. ScholarBank@NUS Repository.
Abstract: Due to artifacts in secondary ion mass spectrometry (SIMS), conventional SIMS is increasingly unable to meet the stringent requirements for high depth resolution profiling. We have developed a novel high resolution backside SIMS depth profiling technique using silicon-on-insulator (SOI) substrates for backside thinning. The energy dependent depth resolution of a boron implant profile is evaluated for front and backside SIMS. The results show that the depth resolution improves significantly for the backside approach even at the low primary ion energy of 0.5 keV. The backside SIMS of a boron diffusion profile shows a shallower junction depth and lower diffusivity than frontside SIMS. The challenge for SIMS depth profiling to characterize dopant distributions across an abrupt interface was also demonstrated by high depth resolution backside SIMS, and the quantification of boron penetration and diffusion through a nitrided gate oxide is achieved.
URI: http://scholarbank.nus.edu.sg/handle/10635/14293
Appears in Collections:Ph.D Theses (Open)

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