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https://scholarbank.nus.edu.sg/handle/10635/142817
DC Field | Value | |
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dc.title | STUDYING THE METAL/LAYERED SEMICONDUCTOR SCHOTTKY INTERFACE USING TEMPERATURE DEPENDENT CURRENT-VOLTAGE MEASUREMENTS AND BALLISTIC ELECTRON EMISSION MICROSCOPY | |
dc.contributor.author | WONG PEI YU CALVIN | |
dc.date.accessioned | 2018-06-04T18:00:29Z | |
dc.date.available | 2018-06-04T18:00:29Z | |
dc.date.issued | 2018-01-26 | |
dc.identifier.citation | WONG PEI YU CALVIN (2018-01-26). STUDYING THE METAL/LAYERED SEMICONDUCTOR SCHOTTKY INTERFACE USING TEMPERATURE DEPENDENT CURRENT-VOLTAGE MEASUREMENTS AND BALLISTIC ELECTRON EMISSION MICROSCOPY. ScholarBank@NUS Repository. | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/142817 | |
dc.description.abstract | Layered materials based on transition metal dichalcogenides (TMDCs) have attracted a huge amount of attention in recent years as they have been demonstrated to have great potential for next generation electronics. However, one of the key challenges in the field is a lack of know-how to engineer reliable metal/2D semiconductor contacts as a fundamental understanding of the interface is lacking. In this thesis, I have conducted a thorough study of the Au/MoS2 and Au/WS2 Schottky interfaces using temperature dependent current-voltage measurements (I-V-T) and ballistic electron emission microscopy (BEEM). I show that these interfaces are inhomogeneous and can be fit with at least two Gaussian distributions of Schottky barrier heights. Using BEEM, I experimentally verified the presence of the Gaussian distributed Schottky barrier heights. These results are important to guide researchers in the field towards understanding Schottky barriers at the metal/TMDC contacts and the importance of considering Schottky barrier inhomogeneities at the metal/2D-semiconductor interfaces. My work provides important experimental insights to guide researchers in the field towards understanding Schottky barriers at the metal/TMDC contacts. Importantly, the presence of inhomogeneities at the metal/semiconductor interface should be considered in the extraction of device parameters and their impact on device performance should be considered. | |
dc.language.iso | en | |
dc.subject | BEEM, I-V-T, TMDC, MoS2, WS2, Schottky barrier | |
dc.type | Thesis | |
dc.contributor.department | DEAN'S OFFICE (NGS FOR INTGR SCI & ENGG) | |
dc.contributor.supervisor | Wee Thye Shen, Andrew | |
dc.contributor.supervisor | CEDRIC TROADEC | |
dc.contributor.supervisor | Goh Kuan Eng, Johnson | |
dc.description.degree | Ph.D | |
dc.description.degreeconferred | DOCTOR OF PHILOSOPHY (NGS) | |
dc.identifier.orcid | 0000-0002-3135-7534 | |
Appears in Collections: | Ph.D Theses (Open) |
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WongCPY.pdf | 4.99 MB | Adobe PDF | OPEN | None | View/Download |
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