Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/142766
Title: PERFORMANCE EVALUATION OF NOVEL DEVICES BASED ON 3-D REAL-SPACE ATOMIC SIMULATORS AND FULL COMPLEX BANDSTRUCTURE
Authors: ZHANG XIAOYI
Keywords: 3-D atomic model, full complex bandstructure, ferroelectric material, negative capacitance FET, real-space Poisson solver, device simulation
Issue Date: 19-Dec-2017
Citation: ZHANG XIAOYI (2017-12-19). PERFORMANCE EVALUATION OF NOVEL DEVICES BASED ON 3-D REAL-SPACE ATOMIC SIMULATORS AND FULL COMPLEX BANDSTRUCTURE. ScholarBank@NUS Repository.
Abstract: Power consumption has been one main challenge of CMOS technology with scaling of MOSFETs. To reduce power consumption and remain the same on-current, there are two directions: to replace traditional channel material silicon with new materials which have higher injection velocity or density of states, or to replace traditional MOSFET structure with novel devices which have a better gate control or steeper SS. Based on 3-D real-space atomic Poisson solver and full complex bandstructure, the simulators developed in this thesis are able to offer a rapid and accurate way for evaluating and analyzing the device performance of conventional devices and novel devices with special gate designs. Devices with different channel materials and structures are examined in the thesis with this simulation scheme in order to improve device performance and reduce power consumption. The findings for device optimization from this thesis are instructive for novel device design in future CMOS technology.
URI: http://scholarbank.nus.edu.sg/handle/10635/142766
Appears in Collections:Ph.D Theses (Open)

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