Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14248
Title: Near infra-red (NIR) spectroscopic photon emission microscopy for semiconductor devices
Authors: LEN WEE BENG
Keywords: Near Infra-Red, Spectroscopic, Photon Emission Microscopy, Semiconductor
Issue Date: 17-Nov-2004
Source: LEN WEE BENG (2004-11-17). Near infra-red (NIR) spectroscopic photon emission microscopy for semiconductor devices. ScholarBank@NUS Repository.
Abstract: This report presents the Near Infra-Red Spectroscopic Photon Emission Microscope (NIR SPEM) developed to investigate emission spectrums of mainly silicon devices. The system has 2 modes of operations, high speed and high sensitivity mode, and spectral response from 400nm to 1800nm wavelength. It was found that emission spectrums of forward biased pn junctions are dependent on junction doping concentration while spectrums of reverse biased junctions are sensitive to the field conditions. Mean emission wavelength, l50%, of nMOSFETs in saturation is found to correlate closely with channel electric field strength. The spectral region around silicon bandgap energy (950nm to 1300nm) is found to exhibit abnormalities during electrical malfunctioning of devices.
URI: http://scholarbank.nus.edu.sg/handle/10635/14248
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