Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14157
Title: Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes
Authors: NG CHIEW HAI
Keywords: LPE, LED, GaP, fabrication, epitaxy, green
Issue Date: 14-Sep-2004
Source: NG CHIEW HAI (2004-09-14). Liquid phase epitaxial growth and fabrication of gallium phosphide green light emitting diodes. ScholarBank@NUS Repository.
Abstract: Nitrogen-doped gallium phosphide is a material that has been well used in the fabrication of yellow-green LEDs in the optoelectronics industry. The parameters involved in the LPE growth of this material were studied and evaluated. It has been found that the baking cycle prior to growth has a major impact on the thermal dissociation of phosphorus from the substrate surface while growth temperature did not affect the luminescence efficiency. Different schemes to protect the substrate from thermal degradation were investigated. Keeping the substrate in a cool zone before growth and covering it under the graphite boat were effective in preventing such degradation. Nitrogen doping to introduce isoelectronic centers was incorporated in the LPE system. This has to be well controlled as too little nitrogen resulted in dim LEDs, while concentration levels above 0.1% in the gaseous phase resulted in dendrite growths. A new LED fabrication process has been explored in the study, and this has shortened the time needed to fabricate the device structure, which allows electrical and optical tests to be performed on the wafers. The process defines both the light emission region and the metal contact in a single masking step.
URI: http://scholarbank.nus.edu.sg/handle/10635/14157
Appears in Collections:Master's Theses (Open)

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