Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/14095
Title: Characterization of gallium nitride grown on sapphire and GaN substrates
Authors: TAN LAY THENG
Keywords: GaN, V/III flux ratio, Si doping concentration, edge threading dislocation, screw threading dislocation, defect
Issue Date: 3-Aug-2004
Citation: TAN LAY THENG (2004-08-03). Characterization of gallium nitride grown on sapphire and GaN substrates. ScholarBank@NUS Repository.
Abstract: In this work, a batch of GaN samples grown with a variation in the Si-doping levels and V/III flux ratios (i.e. from Ga-rich regime to N-rich regime) on sapphire substrates and GaN substrates are studied. For n-GaN grown on sapphire substrates, it has been observed that the V/III flux ratio affects the incorporation of Ga and N atoms into the film, the screw dislocation and defect generation. As for Si-doping, it increases the surface roughness and affects the edge dislocation generation. Screw dislocation generation is more sensitive to V/III flux ratio while edge dislocation is more sensitive to Si-doping concentration. For n-GaN grown on GaN substrates, it has been observed that the V/III flux ratio affects the doping efficiency, PL spectrum width and defect generation. The concentration of acceptor levels increases towards N-rich condition. Si incorporation increases the deep level trap concentration and generates non-radiative recombination centers.
URI: http://scholarbank.nus.edu.sg/handle/10635/14095
Appears in Collections:Master's Theses (Open)

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Title Page.PDF10.31 kBAdobe PDF

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Acknowledgments-Table of Content-Summary.pdf35.59 kBAdobe PDF

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List of Figures-Tables-Symbols.pdf70.95 kBAdobe PDF

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Chapter 1- Introduction.PDF34.59 kBAdobe PDF

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Chapter 2- Gallium Nitride Growth and Properties.pdf120.59 kBAdobe PDF

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Chapter 3- Materials Characterization Techniques.pdf296.35 kBAdobe PDF

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Chapter 4- n-GaN on Sapphire Substrate.pdf313.88 kBAdobe PDF

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Chapter 5- n-GaN on GaN Substrate.pdf232.88 kBAdobe PDF

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Chapter 6- Conclusion.pdf31.92 kBAdobe PDF

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Chapter 7- Reference.pdf59.51 kBAdobe PDF

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Appendix I.PDF572.46 kBAdobe PDF

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Appendix II.pdf104.53 kBAdobe PDF

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Publications.PDF17.43 kBAdobe PDF

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