Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14095
Title: Characterization of gallium nitride grown on sapphire and GaN substrates
Authors: TAN LAY THENG
Keywords: GaN, V/III flux ratio, Si doping concentration, edge threading dislocation, screw threading dislocation, defect
Issue Date: 3-Aug-2004
Source: TAN LAY THENG (2004-08-03). Characterization of gallium nitride grown on sapphire and GaN substrates. ScholarBank@NUS Repository.
Abstract: In this work, a batch of GaN samples grown with a variation in the Si-doping levels and V/III flux ratios (i.e. from Ga-rich regime to N-rich regime) on sapphire substrates and GaN substrates are studied. For n-GaN grown on sapphire substrates, it has been observed that the V/III flux ratio affects the incorporation of Ga and N atoms into the film, the screw dislocation and defect generation. As for Si-doping, it increases the surface roughness and affects the edge dislocation generation. Screw dislocation generation is more sensitive to V/III flux ratio while edge dislocation is more sensitive to Si-doping concentration. For n-GaN grown on GaN substrates, it has been observed that the V/III flux ratio affects the doping efficiency, PL spectrum width and defect generation. The concentration of acceptor levels increases towards N-rich condition. Si incorporation increases the deep level trap concentration and generates non-radiative recombination centers.
URI: http://scholarbank.nus.edu.sg/handle/10635/14095
Appears in Collections:Master's Theses (Open)

Show full item record
Files in This Item:
File Description SizeFormatAccess SettingsVersion 
Title Page.PDF10.31 kBAdobe PDF

OPEN

NoneView/Download
Acknowledgments-Table of Content-Summary.pdf35.59 kBAdobe PDF

OPEN

NoneView/Download
List of Figures-Tables-Symbols.pdf70.95 kBAdobe PDF

OPEN

NoneView/Download
Chapter 1- Introduction.PDF34.59 kBAdobe PDF

OPEN

NoneView/Download
Chapter 2- Gallium Nitride Growth and Properties.pdf120.59 kBAdobe PDF

OPEN

NoneView/Download
Chapter 3- Materials Characterization Techniques.pdf296.35 kBAdobe PDF

OPEN

NoneView/Download
Chapter 4- n-GaN on Sapphire Substrate.pdf313.88 kBAdobe PDF

OPEN

NoneView/Download
Chapter 5- n-GaN on GaN Substrate.pdf232.88 kBAdobe PDF

OPEN

NoneView/Download
Chapter 6- Conclusion.pdf31.92 kBAdobe PDF

OPEN

NoneView/Download
Chapter 7- Reference.pdf59.51 kBAdobe PDF

OPEN

NoneView/Download
Appendix I.PDF572.46 kBAdobe PDF

OPEN

NoneView/Download
Appendix II.pdf104.53 kBAdobe PDF

OPEN

NoneView/Download
Publications.PDF17.43 kBAdobe PDF

OPEN

NoneView/Download

Page view(s)

361
checked on Jan 14, 2018

Download(s)

3,272
checked on Jan 14, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.