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Title: | Characterization of gallium nitride grown on sapphire and GaN substrates | Authors: | TAN LAY THENG | Keywords: | GaN, V/III flux ratio, Si doping concentration, edge threading dislocation, screw threading dislocation, defect | Issue Date: | 3-Aug-2004 | Citation: | TAN LAY THENG (2004-08-03). Characterization of gallium nitride grown on sapphire and GaN substrates. ScholarBank@NUS Repository. | Abstract: | In this work, a batch of GaN samples grown with a variation in the Si-doping levels and V/III flux ratios (i.e. from Ga-rich regime to N-rich regime) on sapphire substrates and GaN substrates are studied. For n-GaN grown on sapphire substrates, it has been observed that the V/III flux ratio affects the incorporation of Ga and N atoms into the film, the screw dislocation and defect generation. As for Si-doping, it increases the surface roughness and affects the edge dislocation generation. Screw dislocation generation is more sensitive to V/III flux ratio while edge dislocation is more sensitive to Si-doping concentration. For n-GaN grown on GaN substrates, it has been observed that the V/III flux ratio affects the doping efficiency, PL spectrum width and defect generation. The concentration of acceptor levels increases towards N-rich condition. Si incorporation increases the deep level trap concentration and generates non-radiative recombination centers. | URI: | http://scholarbank.nus.edu.sg/handle/10635/14095 |
Appears in Collections: | Master's Theses (Open) |
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File | Description | Size | Format | Access Settings | Version | |
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Title Page.PDF | 10.31 kB | Adobe PDF | OPEN | None | View/Download | |
Acknowledgments-Table of Content-Summary.pdf | 35.59 kB | Adobe PDF | OPEN | None | View/Download | |
List of Figures-Tables-Symbols.pdf | 70.95 kB | Adobe PDF | OPEN | None | View/Download | |
Chapter 1- Introduction.PDF | 34.59 kB | Adobe PDF | OPEN | None | View/Download | |
Chapter 2- Gallium Nitride Growth and Properties.pdf | 120.59 kB | Adobe PDF | OPEN | None | View/Download | |
Chapter 3- Materials Characterization Techniques.pdf | 296.35 kB | Adobe PDF | OPEN | None | View/Download | |
Chapter 4- n-GaN on Sapphire Substrate.pdf | 313.88 kB | Adobe PDF | OPEN | None | View/Download | |
Chapter 5- n-GaN on GaN Substrate.pdf | 232.88 kB | Adobe PDF | OPEN | None | View/Download | |
Chapter 6- Conclusion.pdf | 31.92 kB | Adobe PDF | OPEN | None | View/Download | |
Chapter 7- Reference.pdf | 59.51 kB | Adobe PDF | OPEN | None | View/Download | |
Appendix I.PDF | 572.46 kB | Adobe PDF | OPEN | None | View/Download | |
Appendix II.pdf | 104.53 kB | Adobe PDF | OPEN | None | View/Download | |
Publications.PDF | 17.43 kB | Adobe PDF | OPEN | None | View/Download |
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