Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/14015
Title: Quantum modeling and characterization of deep submicron MOSFETs
Authors: HOU YONG TIAN
Keywords: CMOS devices; Quantum Mechanical Effects; Direct Tunneling Current; Ultrathin Gate Oxide; High Dielectric Constant Dielectrics; Metal Gate.
Issue Date: 17-May-2004
Source: HOU YONG TIAN (2004-05-17). Quantum modeling and characterization of deep submicron MOSFETs. ScholarBank@NUS Repository.
Abstract: This thesis concentrates on investigations of carrier quantization and direct tunneling in CMOS devices. In p-MOSFET, the effect of valence band mixing on hole quantization is addressed and an improved one-band effective mass method including valence band mixing is demonstrated. Direct tunneling through ultrathin gate dielectrics were characterized and simulated successfully by a proposed physical model. For hole tunneling, a Freeman-Dahlke dispersion form was introduced to account for the non-parabolic dispersion effect. Studies were further extended to dielectrics with high permittivity, including Si3N4, Al2O3 and HfO2. Based on simulated gate leakage, the scalability of these dielectrics in future CMOS technology was evaluated. A study is also conducted to explore the impact of metal gate on tunneling leakage. A dramatic decrease in gate to source-drain extension tunneling is found when using mid-gap metal gates, suggesting the superiority of ultrathin body silicon-on-insulator (SOI) MOSFETs in suppressing off-sate leakage.
URI: http://scholarbank.nus.edu.sg/handle/10635/14015
Appears in Collections:Ph.D Theses (Open)

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