Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13871
Title: MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces
Authors: ZHENG YUEBING
Keywords: Atomic force microscopy,Reflection high-energy electron diffraction,Shallow spherically shaped crater,Molecular beam epitaxy,Quantum dot,III-V group
Issue Date: 13-Apr-2004
Source: ZHENG YUEBING (2004-04-13). MBE growth of InAs quantum dots on cratered GaAs (001) substrate: An extended set of vicinal surfaces. ScholarBank@NUS Repository.
Abstract: Earlier attempts to investigate the effect of vicinal surfaces on formation of quantum dots based on the Stranski-Krastanow mechanism were thwarted by limited polar and azimuthal misorientations on one substrate. This research has demonstrated the fabrication of crater on GaAs (001) substrate by dimpling. The obtained craters enable us to create an extended set of vicinal surfaces on the same GaAs (001) substrate. An effective cleaning and etching method is chosen to remove the particles and contaminants on crater surface. Some empirical rules, relating step height and terrace width to the polar and azimuthal misorientation, have been observed during AFM study of the morphology of crater. The self-assembled InAs QDs are grown on the crater in the MBE system. The subsequent AFM study addresses the effect of the vicinal surfaces with continuous polar and azimuthal misorientation of a GaAs (001) substrate on the formation of the InAs QDs comprehensively.
URI: http://scholarbank.nus.edu.sg/handle/10635/13871
Appears in Collections:Master's Theses (Open)

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01_Title_page.pdf45.47 kBAdobe PDF

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02_Acknowledgements.pdf54.9 kBAdobe PDF

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03_Table_of_contents.pdf84.21 kBAdobe PDF

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04_Summary.pdf53.59 kBAdobe PDF

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05_List_of_figures.pdf94.73 kBAdobe PDF

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13_Bibliogrpahy.pdf131.48 kBAdobe PDF

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