Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/13775
Title: Microstructure and magnetic properties of CoZr and Co-doped TiO2 thin films
Authors: YAO XIAOFENG
Keywords: CoZr, Co-doped TiO2, magnetic, thin film, microstructure
Issue Date: 6-May-2004
Source: YAO XIAOFENG (2004-05-06). Microstructure and magnetic properties of CoZr and Co-doped TiO2 thin films. ScholarBank@NUS Repository.
Abstract: Two kinds of new magnetic materials were investigated systematically. In the first part,CoZr thin film, it is proved that post annealing is effective to induce the phase transition of CoZr thin films from as-deposited non-magnetic state to annealed ferromagnetic state. For Co40Zr60 thin films, phase change occurs after annealing at 550A?C for 2 hours. The annealing temperature needed for phase change is much lower than that of rapidly quenched bulk samples. Co11Zr2 and Co23Zr6 magnetic phases are formed after annealing, which lead to the enhancement of the magnetism of annealed samples.In the second part, Co-doped TiO2 thin films, Co(a?!) binding state is found in most annealed samples, and its intensity increases with the annealing temperature. Samples with partial co-sputtering structure have much stronger Co(a?!) peak in XPS patterns than those of multilayer structure. The low-temperature VSM measurement shows the saturation magnetization at 150 K is 1.325 uB per Co atom, which is close to the value expected for low-spin Co(a?!).
URI: http://scholarbank.nus.edu.sg/handle/10635/13775
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