INGAAS QUANTUM-WELL MOSFETS ON SILICON SUBSTRATES FOR NEXT-GENERATION LOGIC & MIXED-SIGNAL APPLICATIONS

Abstract

High mobility channel materials such as InGaAs and Ge hold great promise for future logic and mixed-signal circuit applications. In particular, heterogeneous integration of InGaAs transistors with mature Si-CMOS technology will result in next-generation hybrid circuits, which will exploit the high functional density of Si-CMOS and excellent high-frequency performance of InGaAs technology. This thesis focuses on the development of InGaAs and Ge MOSFETs on Si substrates. First, MOCVD-grown InGaAs quantum-well (QW) MOSFETs are demonstrated on Si substrates with record high effective electron mobility of 4400 cm^2/V·s at sheet electron density of 3×10^12 cm^−2. In the second part, monolithic integration of InAs n-MOSFETs and Ge p-MOSFETs on Si substrates is demonstrated using an ultra-thin (sub-120 nm) III-V buffer technology with record device performances.