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Title: A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology
Keywords: Copper, silicon nitride, alpa/beta-tantalum, ammonia plasma treatment, electromigration, adhesion.
Issue Date: 9-Feb-2004
Citation: YONG LAI LIN, CLARE (2004-02-09). A study of the Si3N4/Cu/Ta thin film systems for dual damascene technology. ScholarBank@NUS Repository.
Abstract: Intrinsic film characteristics and interfacial interactions of the Ta/Cu/Si3N4 thin film system used in current integrated circuit damascene interconnect technology are investigated. A novel cool Cu template process is developed for deposition of mixed phase alpha/beta-Ta and its relevant barrier properties and formation mechanism are studied. The mixed phase alpha/beta-Ta shows improved electrical resistance and comparable barrier properties. The physical and chemical interactions at the Cu/Si3N4 interface due to NH3 plasma treatment are presented. Introduction of NH3 plasma treatment on the Cu surface improves electromigration and adhesion performance via a removal of oxygenated impurities at the interface. A layer-by-layer, bottom-up reduction model is proposed. Experimental analyses are performed with via-chain resistance measurements, x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), electron diffraction (ED), scanning electron microscopy (SEM), secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS) and modified edge lift-off test (MELT).
Appears in Collections:Master's Theses (Open)

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